参数资料
型号: 2SA1897-AZ
元件分类: 小信号晶体管
英文描述: 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件页数: 1/6页
文件大小: 107K
代理商: 2SA1897-AZ
1998
Document No. D16145EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SA1897
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SA1897 features a low saturation voltage and is available
for high current control in small dimension. This transistor is ideal
for high efficiency DC/DC converters due to fast switching speed.
FEATURES
High current capacitance
Low collector saturation voltage and high hFE
Insulation type package supportable for radial taping
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
10
V
Collector current (DC)
IC(DC)
TC = 25
°C
5.0
A
Collector current (pulse)
IC(pulse)
PW
≤ 10 ms, duty cycle ≤ 50 %
TC = 25
°C
8.0
A
Base current (DC)
IB(DC)
0.5
A
Total power dissipation
PT
1.0
W
Total power dissipation
PT
TC = 25
°C
6.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
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