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参数资料
| 型号： | 2SA1943 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 230 V, PNP, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-21F1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 142K |
| 代理商： | 2SA1943 |
2SA1943
2004-07-07
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1943
Power Amplifier Applications
High collector voltage: VCEO = 230 V (min)
Complementary to 2SC5200
Recommended for 100-W high-fidelity audio frequency amplifier
output stage.
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
V
Collector-emitter voltage
VCEO
230
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
15
A
Base current
IB
1.5
A
Collector power dissipation
(Tc = 25°C)
PC
150
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 230 V, IE = 0
―
5.0
A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
5.0
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
230
―
V
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
55
―
160
DC current gain
hFE (2)
VCE = 5 V, IC = 7 A
35
60
―
Collector-emitter saturation voltage
VCE (sat)
IC = 8 A, IB = 0.8 A
―
1.5
3.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 7 A
―
1.0
1.5
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
―
30
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
360
―
pF
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1946-13-1E | 700 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1946-T13-1F | 700 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1946-T13-1G | 700 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1947-T13-1C | 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1947-T13-1E | 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1943-0 | 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR PNP 2-21F1A 制造商:MAGNATEC 功能描述:TRANSISTOR, PNP, 2-21F1A |
| 2SA1943-0 | 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR PNP 2-21F1A |
| 2SA1943N(S1,E,S) | 功能描述:TRANS PNP 230V 15A TO-3PN 制造商:toshiba semiconductor and storage 系列:- 包装:管件 零件状态:有效 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:15A 电压 - 集射极击穿（最大值）:230V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:3V @ 800mA，8A 电流 - 集电极截止（最大值）:5μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:80 @ 1A，5V 功率 - 最大值:150W 频率 - 跃迁:30MHz 安装类型:通孔 封装/外壳:TO-3P-3，SC-65-3 供应商器件封装:TO-3P（N） 标准包装:150 |
| 2SA1943N(S1,X,S) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR |
| 2SA1943-O | 功能描述:两极晶体管 - BJT PNP 230V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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