参数资料
型号: 2SA1955-B
元件分类: 小信号晶体管
英文描述: 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: 2-2H1A, 3 PIN
文件页数: 1/5页
文件大小: 260K
代理商: 2SA1955-B
2SA1955
2003-03-27
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1955
General Purpose Amplifier Applications
Switching and Muting Switch Application
Low saturation voltage: VCE (sat) (1) = 15 mV (typ.)
@IC = 10 mA/IB = 0.5 mA
Large collector current: IC = 400 mA (max)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
400
mA
Base current
IB
50
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
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