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参数资料
| 型号： | 2SA1978-FB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/6页 |
| 文件大小： | 60K |
| 代理商： | 2SA1978-FB |
DATA SHEET
Silicon Transistor
2SA1978
PNP EPITAXIAL SILICON TRANSISTOR
MICROWAVE AMPLIFIER
1996
Document No. P11028EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
PRELIMINARY DATA SHEET
FEATURES
PACKAGE DIMENSIONS
High fT
(in milimeters)
fT = 5.5 GHz TYP.
| S21e |
2 = 10.0 dB TYP. @f = 1.0 GHz, V
CE =
10 V, IC = 15 mA
High speed switching characteristics
Equivalent NPN transistor is the 2SC2351.
Alternative of the 2SA1424.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °
°°°C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCB0
20
V
Collector to Emitter Voltage
VCE0
12
V
Emitter to Base Voltage
VEB0
3.0
V
Collector Current
IC
50
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Ti
150
°C
Storage Temperature
Tstg
65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °
°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
ICB0
VCB =
10 V
0.1
A
Emitter Cutoff Current
IEB0
VEB =
2 V
0.1
A
DC Current Gain
hFE
VCE =
10 V, IC = 15 mA
20
40
100
Gain Bandwidth Product
fT
VCE =
10 V, IC = 15 mA
4.0
5.5
GHz
Collector Capacitance
Cre*
VCB =
10 V, IE = 0, f = 1 MHz
0.5
1
pF
Insertion Power Gain
| S21e |
2
VCE =
10 V, IC = 15 mA, f = 1.0 GHz
8.0
10.0
dB
Noise Figure
NF
VCE =
10 V, IC = 3.0 mA, f = 1 GHz
2.0
3
dB
*
Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
hFE Classification
Rank
FB
Marking
T93
hFE
20 to 100
2.8+0.2
_
1.5
0.65
+0.1
–0.15
2
1
3
2.9
+
0.2
_
0.95
0.4
+0.1
–0.05
0.4
+0.1
–0.05
Marking
0.16
+0.1
–0.06
0.3
1.1
to
1.4
0
to
0.1
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector
Marking: T93
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1978-FB-A | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 2SA1978-FB-A | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 2SA1986-R | 15 A, 230 V, PNP, Si, POWER TRANSISTOR |
| 2SA1986 | 15 A, 230 V, PNP, Si, POWER TRANSISTOR |
| 2SA2009GS | 20 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1978-FB(T1B-A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1978-T1B | 制造商:NEC Electronics Corporation 功能描述: |
| 2SA1978-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER |
| 2SA1978-T1B-A(FB) | 制造商:Renesas Electronics 功能描述:PNP |
| 2SA198 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-1 -15V -0.005A .03W |
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