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参数资料
| 型号： | 2SA1988 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 封装： | MP-88, TO-3P, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 47K |
| 代理商： | 2SA1988 |
2
2SA1988
CHARACTERISTICS (TA = 25
°C)
FORWARD BIAS SAFE OPERATING AREA
VCE - Collector to Emitter Voltage - V
IC
-
Collector
Current
-
A
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
VCE - Collector to Emitter Voltage - V
IC
-
Collector
Current
-
A
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature -
°C
dT
-
Percentage
of
Rated
Power
-
%
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature -
°C
P
T
-
Total
Power
Dissipation
-
W
0
20
0
50
100
150
20
40
60
80
100
40
60
80
100
120
140
160
140
120
100
80
60
40
20
-0.1
-1
-10
-100
-10
-100
-1000
TC = 25
°C
Single Pulse
0
-20
-30
-4
-6
-10
S/b
Limited
Dissipation
Limited
PW=1ms
Dissipation
Limited
IC(Pulse)
IC(DC)
S/b
Limited
-8
-10
-12
-2
20mA
40mA
60mA
80mA
100mA
IB=120mA
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth(t)
-
Transient
Thermal
Resistance
-
°C/
W
0.01
100
1 m
10 m
100 m
1
10
100
1 000
100
10ms
100ms
200ms
Pulsed
10
1
0.1
Single Pulse
TC=25
°C
Rth (J-C)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1988-A | 7 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 2SA2012 | 5 A, 30 V, PNP, Si, POWER TRANSISTOR |
| 2SA2012 | 5 A, 30 V, PNP, Si, POWER TRANSISTOR |
| 2SA2030T2L | 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2018TL | 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1KBOX | 制造商:Metallics 功能描述:Exact Equal/ 1-5 Days |
| 2SA200 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-1 -15V -.005A .03 |
| 2SA2002 | 制造商:ISAHAYA 制造商全称:Isahaya Electronics Corporation 功能描述:FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE) |
| 2SA2004 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type |
| 2SA2005 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-220FN |
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