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参数资料
| 型号： | 2SA2029K3T5G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, CASE 631AA-01, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 182K |
| 代理商： | 2SA2029K3T5G |
Semiconductor Components Industries, LLC, 2003
November, 2003 Rev. P0
131
Publication Order Number:
2SA2029K3T5G/D
2SA2029K3T5G
Product Preview
PNP Silicon General
Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier
applications. This device is housed in the SOT723 package which is
designed for low power surface mount applications, where board
space is at a premium.
Reduces Board Space
High hFE, 210460 (typical)
Low VCE(sat), < 0.5 V
ESD Performance: HBM u 2000 V, MM u 200 V
Available in 4 mm, 8000 Unit Tape and Reel
PbFree Package May be Available. The GSuffix Denotes a
PbFree Lead Finish
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
CollectorBase Voltage
V(BR)CBO
60
Vdc
CollectorEmitter Voltage
V(BR)CEO
50
Vdc
EmitterBase Voltage
V(BR)EBO
6.0
Vdc
Collector Current Continuous
IC
100
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation (Note 3)
PD
265
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
55 ~ + 150
°C
3. Device mounted on a FR4 glass epoxy printed circuit board using the
minimum recommended footprint.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
2SA2029K3T5G
SOT723
8000/Tape & Reel
SOT723
CASE 631AA
MARKING
DIAGRAM
1
2
3
XX M
XX = Specific Device Code
M = Date Code
PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
COLLECTOR
3
1
BASE
2
EMITTER
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA2029M3 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:PNP Silicon General Purpose Amplifier Transistor |
| 2SA2029M3T5G | 功能描述:两极晶体管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2029Q | 制造商:ROHM 制造商全称:Rohm 功能描述:General Purpose Transistor |
| 2SA2029R | 制造商:ROHM 制造商全称:Rohm 功能描述:General Purpose Transistor |
| 2SA2029S | 制造商:ROHM 制造商全称:Rohm 功能描述:General Purpose Transistor |
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