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参数资料
型号： 2SA2030T2L
元件分类： 小信号晶体管
英文描述： 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装： VMT3, 3 PIN
文件页数： 2/3页
文件大小： 139K
代理商： 2SA2030T2L
2SA2018 / 2SA2030 / 2SA2119K
Transistors
Rev.C
2/2
Packaging specifications and hFE
Package name
Code
Taping
Basic ordering unit (pieces)
2SA2119K
2SA2018
2SA2030
T146
3000
TL
3000
T2L
8000
Type
hFE
Electrical characteristic curves
1
2
5
10
20
50
100
200
500
1000
0
0.5
1.0
1.5
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR
CURRENT
:
I
C
(mA)
VCE
=2V
Fig.1 Grounded Emitter Propagation
Characteristics
Ta
= 40°C
Ta
=25°C
Ta
=125°C
0
20
40
60
80
100
120
140
160
180
200
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Fig.2 Typical Output Characteristics
Ta=25
pulsed
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR
CURRENT
:
I
C
(
mA)
I
B =700A
I
B =600A
I
B =500A
I
B =400A
I
B =300A
I
B =200A
I
B =100A
I
B =0A
°C
1
2
5
10
20
50
100
200
500
1000
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : IC (mA)
DC
CURRENT
GAIN
:
h
FE
VCE
=2V
Fig.3 DC Current Gain vs.
Collector Current
Ta
= 40°C
Ta
=25°C
Ta
=125°C
1
2
5
10
20
50
100
200
500
1000
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : IC (mA)
IC / IB
=20
Ta
= 40°C
Ta
=25°C
Ta
=125°C
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(mV)
Fig.4 Collector-Emitter Saturation
Voltage vs.
Collector Current (
Ι)
1
2
5
10
20
50
100
200
500
1000
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : IC (mA)
Ta
=25°C
IC / IB
=50
IC / IB
=20
IC / IB
=10
Fig.5 Collector-Emitter Saturation
Voltage vs.
Collector Current (
ΙΙ)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(mV)
10
20
50
100
200
500
1000
2000
5000
10000
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : IC (mA)
IC / IB
=20
Ta
=125°C
Ta
=25°C
Ta
= 40°C
BASER
SATURATION
VOLTAGE
:
V
BE
(sat)
(mV)
Fig.6 Base-Emitter Saturation
Voltage vs.Collecter Current
1
2
5
10
20
50
100
200
500
1000
1
2
5
10 20
50 100 200
500 1000
EMITTER CURRENT : IC (mA)
TRANSITION
FREQUENCY
:
f
T
(MHz)
VCE
=2V
Ta
=25°C
Fig.7 Gain Bandwidth Product vs.
Emitter Current
1
2
5
10
20
50
100
200
500
1000
0.1 0.2
0.5
1
2
5
10 20
50 100
EMITTER TO BASE VOLTAGE : VEB (V)
IE
=0A
f
=1MHz
Ta
=25°C
Fig.8 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
Cib
Cob
EMITTER
INPUT
CAPACITANCE
:
Cib
(
pF
)
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(
pF
)
相关PDF资料
PDF描述
2SA2018TL 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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2SA2044 9000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2044 9000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
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2SA2034 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High-Voltage Switching Applications
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2SA2037 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 50V 7A TO-126
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