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参数资料
| 型号： | 2SA2037 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-126ML, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 38K |
| 代理商： | 2SA2037 |
2SA2037 / 2SC5694
No.6587-1/5
Applications
Relay drivers, lamp drivers, motor drivers and
printer drivers.
Features
Adoption of MBIT process.
Large current capacity.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
( ):2SA2037
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(
50)60
V
Collector-to-Emitter Voltage
VCEO
(
)50
V
Emitter-to-Base Voltage
VEBO
(
)6
V
Collector Current
IC
(
)7
A
Collector Current (Pulse)
ICP
(
)10
A
Base Current
IB
(
)1.2
A
Collector Dissipation
PC
1.5
W
Tc=25
°C10
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C
Ordering number : ENN6587A
2SA2037 / 2SC5694
DC / DC Converter Applications
Package Dimensions
unit : mm
2042B
[2SA2037 / 2SC5694]
71003 TS IM TA-4142 / 82200 TS IM TA-2916
PNP / NPN Epitaxial Planar Silicon Transistors
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
4.0
1.0
8.0
1.6
0.8
0.75
1.5
7.5
3.0
1.4
11.0
15.5
3.3
3.0
0.7
2.4
4.8
1.7
1
2
3
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
相关PDF资料 |
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| 2SA2037 | 7 A, 50 V, PNP, Si, POWER TRANSISTOR |
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| 2SC5699 | 8 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC5703 | 4000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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|---|---|
| 2SA2039 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High Current Switching Applications |
| 2SA2039_05 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High Current Switching Applications |
| 2SA2039_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Current Switching Applications |
| 2SA2039-E | 功能描述:两极晶体管 - BJT BIP PNP 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2039-H | 功能描述:两极晶体管 - BJT BIP PNP 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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