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参数资料
| 型号： | 2SA2067Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封装： | ROHS COMPLIANT, MT-4-A1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 231K |
| 代理商： | 2SA2067Q |
Power Transistors
1
Publication date: January 2003
SJD00286BED
2SA2067
Silicon PNP epitaxial planar type
Power supply for audio & visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■ Features
High speed switching (t
stg: storage time/tf: fall time is short)
Low collector-emitter saturation voltage V
CE(sat)
Superior forward current transfer ratio h
FE linearity
Allowing automatic insertion eith radial taping
■ Absolute Maximum Ratings T
C
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
60
V
Emitter-base voltage (Collector open)
VEBO
6V
Collector current
IC
3A
Peak collector current
ICP
6A
Collector power dissipation
PC
15
W
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC
= 10 mA, I
B
= 0
60
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 60 V, IE = 0
100
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 60 V, IB = 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 6 V, I
C
= 0
1mA
Forward current transfer ratio
hFE1 *
VCE = 4 V, IC = 1 A
120
320
hFE2
VCE = 4 V, IC = 3 A
40
Collector-emitter saturation voltage
VCE(sat)
IC
= 3 A, I
B
= 375 mA
0.8
V
Transition frequency
fT
VCE = 10 V, IC = 0.1 A, f = 10 MHz
90
MHz
Turn-on time
ton
IC = 1 A, Resistance loaded
0.3
s
Storage time
tstg
IB1
= 0.1 A, I
B2
= 0.1 A
0.7
s
Fall time
tf
VCC = 50 V
0.15
s
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
10.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
123
0.65±0.1
1.2±0.1
1.48±0.2
2.25±0.2
C 1.0
0.55±0.1
2.5±0.2
1.05±0.1
13.0
±
0.2
4.2
±
0.2
18.0
±
0.5
Solder
Dip
5.0±0.1
2.5
±
0.1
90
1.0
±0.2
1 : Base
2 : Collector
3 : Emitter
MT-4-A1 Package
Internal Connection
B
C
E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
120 to 250
160 to 320
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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