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参数资料
| 型号： | 2SA2110 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.5 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封装： | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 245K |
| 代理商： | 2SA2110 |
Powor Transistors
Publication date : October 2008
SJD00348AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2110
Silicon PNP epitaxial planar type
For low frequency power amplication
Complementary to 2SC2590
Features
Extremely satisfactory linearity of the forward current transfer ratio hFE
High transfer ratio fT
Makes up a complementary pair with 2SC2590, which is optimum for the pre-
driver stage of a 40 W to 60 W output amplier.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
–120
V
Collector-emitter voltage (Base open)
VCEO
–120
V
Emitter-base voltage (Collector open)
VEBO
–5
V
Collector current
IC
– 0.5
A
Peak collector current
ICP
–1
A
Collector power dissipation
PC
1.2
W
Junction temperature
Tj
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = –100 mA, IB = 0
–120
V
Emitter-base voltage (Collector open)
VEBO
IE = –10 mA, IC = 0
–5
V
Forward current transfer ratio *1
hFE1 *2 VCE = –10 V, IC = –150 mA
90
220
hFE2
VCE = –5 V, IC = –500 mA
50
100
Collector-emitter saturation voltage
VCE(sat) IC = –300 mA, IB = –30 mA
–1.0
V
Base-emitter saturation voltage
VBE(sat) IC = –300 mA, IB = –30 mA
–1.2
V
Transition frequency
fT
VCB = –10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = –10 V, IE = 0, f = 1 MHz
20
30
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classication
Rank
Q
R
hFE1
90 to 160
120 to 220
Package
Code
TO-126B-A1
Pin Name
1. Emitter
2. Collector
3. Base
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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|---|---|
| 2SA2120-O | 12 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 2SA2120 | 12 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 2SA2121-R | 15 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 2SA2121 | 15 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 2SA2125 | 3 A, 50 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA2112 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High Current Switching Applications |
| 2SA2112_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High Current Switching Applications |
| 2SA2112-AN | 功能描述:两极晶体管 - BJT DC-DC CONVERTER RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2113 | 制造商:ROHM 制造商全称:Rohm 功能描述:Medium power transistor (−30V, −2A) |
| 2SA2118 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Power Transistors Silicon PNP epitaxial planar type |
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