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| 型号： | 2SA2154CT |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CST3, 2-1J1A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 151K |
| 代理商： | 2SA2154CT |
2SA2154CT
2009-04-13
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA2154CT
General Purpose Amplifier Applications
High voltage and high current : VCEO = 50V, IC = 100mA (max)
Excellent hFE linearity
: hFE (IC = 0.1 mA) / hFE (IC = 2 mA)= 0.95 (typ.)
High hFE : hFE = 120 to 400
Complementary to 2SC6026CT
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Base current
IB
30
mA
Collector power dissipation
PC
100*
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
* : Mounted on FR4 board (10 mm
× 10 mm × 1 mmt)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
DC current gain
hFE (Note)
VCE = 6 V, IC = 2 mA
120
400
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.18
0.3
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
1.6
pF
Note:
hFE classification Y (F): 120 to 240, GR (H): 200 to 400
( ) marking symbol
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1J1A
Weight: 0.75 mg (typ.)
３
１２
0.
25
±
0
.0
3
1.
0
±
0
.05
0.
65
±
0
.0
2
0.35±0.02
0.15±0.03
0.
2
5±
0
.0
3
0.5±0.03
0.6±0.05
0.
3
8
+0
.02
-0
.03
0.05±0.03
0.
0
5±
0
.0
3
CST3
1.BASE
2.EMITTER
3.COLLECTOR
Type Name
8F
1
3
2
hFE Rank
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA2154CT-GR(TPL3) | 功能描述:两极晶体管 - BJT 100mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2154CT-GR,L3F | 功能描述:TRANS PNP 50V 0.1A 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:100mA 电压 - 集射极击穿（最大值）:50V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:300mV @ 10mA，100mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:200 @ 2mA，6V 功率 - 最大值:100mW 频率 - 跃迁:80MHz 安装类型:表面贴装 封装/外壳:SC-101，SOT-883 供应商器件封装:CST3 标准包装:1 |
| 2SA2154CT-Y(TPL3) | 功能描述:两极晶体管 - BJT 100mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2154-GR | 功能描述:两极晶体管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2154-GR(TPL3) | 功能描述:两极晶体管 - BJT 100mA -0.3V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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