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参数资料
| 型号： | 2SA2209-TL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 15000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TP-FA, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 55K |
| 代理商： | 2SA2209-TL |
2SA2209
No. A0235-1/4
Applications
High-speed switching applications (switching regulator, driver circuit).
Features
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
--50
V
Collector-to-Emitter Voltage
VCEO
--50
V
Emitter-to-Base Voltage
VEBO
--6
V
Collector Current
IC
--15
A
Collector Current (Pulse)
ICP
--20
A
Base Current
IB
--3
A
Collector Dissipation
PC
1W
Tc=25°C20
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=--40V, IE=0A
--10
A
Emitter Cutoff Current
IEBO
VEB=--4V, IC=0A
--10
A
DC Current Gain
hFE1VCE=--2V, IC=--330mA
200
500
hFE2VCE=--2V, IC=--10A
50
Gain-Bandwidth Product
fT
VCE=--10V, IC=--700mA
120
MHz
Output Capacitance
Cob
VCB=--10V, f=1MHz
140
pF
Continued on next page.
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0235
D1306EA TI IM TC-00000354
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
2SA2209
PNP Epitaxial Planar Silicon Transistor
50V / 15A High-Speed Switching
Applications
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA2209-TL | 15000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2210 | 20 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SA2222 | 10 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SA2223AY | 15 A, 260 V, PNP, Si, POWER TRANSISTOR |
| 2SA2223A | 15 A, 260 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA2209-TL-E | 制造商:SANYO 功能描述:PNP 50V 15A 200 to 500 TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 50V 15A TO-251 |
| 2SA221 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR TO-1 -20V -.015A .07W |
| 2SA2210 | 功能描述:两极晶体管 - BJT BIP PNP 20A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2210_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 2SA2210-1E | 制造商:ON Semiconductor 功能描述:BIP PNP 20A 50V - Ammo Pack |
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