参数资料
型号: 2SA2220
元件分类: 功率晶体管
英文描述: 1.5 A, 160 V, PNP, Si, POWER TRANSISTOR
封装: ROHS COMPLIANT, 2-10T1A, 3 PIN
文件页数: 1/5页
文件大小: 185K
代理商: 2SA2220
2SA2220
2009-10-15
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2220
Audio Frequency Amplifier Applications
High collector voltage
: VCEO = -160 V
Small collector output capacitance
: Cob = 17 pF (typ.)
High transition frequency
: fT = 100 MHz (typ.)
Complementary to 2SC6140
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-160
V
Collector-emitter voltage
VCEO
-160
V
Emitter-base voltage
VEBO
-6
V
DC
IC
-1.5
A
Collector current
Pulse
ICP
-2.5
A
Base current
IB
-0.5
A
Collector power dissipation
Pc
1.8
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C
during use of the device.
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
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