参数资料
型号: 2SA673AKBTZ-E
元件分类: 小信号晶体管
英文描述: 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: LEAD FREE, SC-43A, TO-92(1), 3 PIN
文件页数: 2/6页
文件大小: 75K
代理商: 2SA673AKBTZ-E
2SA673A(K)
Rev.3.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
–50
V
IC = –10 A, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
–50
V
IC = –1 mA, RBE =
Emitter to base breakdown voltage
V(BR)EBO
–4
V
IE = –10
A, IC = 0
Collector cutoff current
ICBO
–0.5
A
VCE = –20 V, IE = 0
Emitter cutoff current
IEBO
–0.5
A
VEB = –3 V, IC = 0
Base to emitter voltage
VBE
–0.64
V
VCE = –3 V, IC = –10 mA
Collector to emitter saturation voltage
VCE(sat)
–0.2
–0.6
V
IC = –150 mA, IB = –15 mA*
2
Base to emitter saturation voltage
VBE(sat)
–0.87
V
IC = –150 mA, IB = –15 mA*
2
DC current transfer ratio
hFE*
1
60
320
VCE = –3 V, IC = –10 mA
hFE
10
VCE = –3 V, IC = –500 mA*
2
Gain bandwidth product
fT
120
MHz
VCE = –3 V, IC = –10 mA
Turn on time
ton
0.3
s
VCC = –10.3 V
Turn off time
toff
0.6
s
IC = 10 IB1 = –10 IB2 = –10 mA
Storage time
tstg
0.4
s
VCC = –5 V,
IC = IB1 = IB2 = –20 mA
Notes: 1. The 2SA673A(K) is grouped by hFE as follows.
2. Pulse test
B
C
D
60 to 120
100 to 200
160 to 320
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相关代理商/技术参数
参数描述
2SA673AKCTZ-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SA673AKDTZ-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SA673B 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-92
2SA673BTZ-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SA673C 制造商:n/a 功能描述:2SA673 TO92 HIT S3B2A