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参数资料
| 型号： | 2SA675U |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | SC-43, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 112K |
| 代理商： | 2SA675U |
1998
Document No. D16146EJ3V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SA675
PNP SILICON EPITAXIAL TRANSISTOR
FOR DRIVING FLUORESCENT INDICATOR PANNEL
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SA675 is a resin sealed mold transistor and is ideal for
dynamic drivers of counting indicator pannel such as fluorescent
indicator pannel due to high voltage.
High voltage
VCBO >
80 V, VCER > 80 V
Excellent linearity for current of DC current gain
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage
VCER *
80
V
Emitter to base voltage
VEBO
5.0
V
Collector current
IC
100
mA
Total power dissipation
PT
250
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
*RBE = 30 k
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = –60 V, IE = 0
1.0
A
Emitter cutoff current
IEBO
VEB = –3.0 V, IC = 0
1.0
A
DC current gain
hFE1
VCE = –3.0 V, IC = –1.0 mA
60
120
DC current gain
hFE2
VCE = –3.0 V, IC = –20 mA
50
120
300
Collector saturation voltage
VCE(sat)
IC = –20 mA, IB = –1.0 mA
0.10
1.50
V
Base saturation voltage
VBE(sat)
IC = –20 mA, IB = –1.0 mA
0.74
1.20
V
Gain bandwidth product
fT
VCE = –6.0 V, IE = 10 mA
100
170
MHz
Output capacitance
Cob
VCB = –10 V, IE = 0, f = 1.0 MHz
4.5
10
pF
Storage time
tstg
Refer to the test circuit.
0.5
1.0
s
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