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参数资料
| 型号： | 2SA715C |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2500 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TO-126MOD, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 26K |
| 代理商： | 2SA715C |
2SA715
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–35
—
V
I
C = –1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–35
—
V
I
C = –10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
V
I
E = –1 mA, IC = 0
Collector cutoff current
I
CBO
—
–20
AV
CB = –35 V, IE = 0
DC current transfer ratio
h
FE*
1
60
—
320
V
CE = –2 V, IC = –0.5 A
h
FE
20
—
V
CE = –2 V, IC = –1.5 A
(Pulse test)
Base to emitter voltage
V
BE
—
–1.0
–1.5
V
CE = –2 V, IC = –1.5 A
(Pulse test)
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.5
–1.0
V
I
C = –2 A, IB = –0.2 A
(Pulse test)
Gain bandwidth product
f
T
—
160
—
MHz
V
CE = –2 V, IC = –0.2 A
(Pulse test)
Note:
1. The 2SA715 is grouped by h
FE as follows.
BC
D
60 to 120
100 to 200
160 to 320
0.8
0.6
0.4
0.2
0
50
100
150
200
Maximum Collector Dissipation
Curve
Collector
power
dissipation
Pc
(W)
Ambient temperature Ta (
°C)
Area of Safe Operation
–5
–2
–1.0
–0.5
–0.2
–0.1
–1
–2
–5
–10
(–35 V,–0.28 A)
(–4 V,–2.5 A)
–20
–50
Collector to emitter voltage VCE (V)
Collector
current
I
C
(A)
TC = 25°C
IC max(DC Operation)
P
C =
10
W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA715D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 2.5A I(C) | TO-126 |
| 2SA715-D | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA719 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For low-frequency power amplification and driver amplification Complementary |
| 2SA719Q | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA719R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | TO-92VAR |
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