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PNP SILICON TRANSISTOR
2SA733
PNP SILICON TRANSISTOR
DATA SHEET
Document No. D10868EJ7V0DS00 (7th edition)
(Previous No. TC-3004B)
Date Published March 2004 N CP(K)
Printed in Japan
c
The mark
shows major revised points.
1995
DESCRIPTION
The 2SA733 is designed for use in diver stage of AF amplifier.
FEATURES
High hFE and Excellent Linearity: 200 TYP.
hFE (VCE =
6.0 V, IC = 1.0 mA)
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature
55 to +150°C
Junction Temperature
+150
°C Maximum
Maximum Power Dissipations (TA = 25
°C)
Total Power Dissipation
250 mW
Maximum Voltages and Currents (TA = 25
°C)
VCBO
Collector to Base Voltage
60 V
VCEO
Collector to Emitter Voltage
50 V
VEBO
Emitter to Base Voltage
5.0 V
IC
Collector Current
100 mA
IB
Base Current
20 mA
Note Pulse Test PW
≤ 350
s, Duty Cycle ≤ 2%
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC Current Gain
hFE
VCE =
6.0 V, IC = 1.0 mA
90
200
600
Gain Bandwidth Product
fT
VCE =
6.0 V, IE = 10 mA
180
MHz
Output Capacitance
Cob
VCB =
10 V, IE = 0, f = 1.0 MHz
4.5
pF
Collector Cutoff Current
ICBO
VCB =
60 V, IE = 0 A
0.1
A
Emitter Cutoff Current
IEBO
VEB =
5.0 V, IC = 0 A
0.1
A
Base to Emitter Voltage
VBE
ICE =
6.0 A, IC = 1.0 mA
0.58
0.62
0.68
V
Collector Saturation Voltage
VCE(sat)
IC =
100 mA, IB = 10 mA
0.18
0.3
V
CLASSIFICATION OF hFE
Rank
R
Q
P
E
Range
90 to 180
135 to 270
200 to 400
300 to 600
Remark hFE Test Conditions: VCE =
6.0 V, IC = 1.0 mA
PACKAGE DRAWING (Unit: mm)
1.27
2.54
1.77
MAX.
4.2
MAX.
13
12.7
MIN.
5.5
MAX.
5.2 MAX.
φ
0.5
2
1: Emitter
2: Collector
3: Base
EIAJ:
SC-43B
JEDEC: TO-92
IEC:
PA33