- 您现在的位置：买卖IC网 > PDF目录246849 > 2SA733Q 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF资料下载
参数资料
| 型号： | 2SA733Q |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | SC-43B, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 268K |
| 代理商： | 2SA733Q |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
PNP SILICON TRANSISTOR
2SA733
PNP SILICON TRANSISTOR
DATA SHEET
Document No. D10868EJ7V0DS00 (7th edition)
(Previous No. TC-3004B)
Date Published March 2004 N CP(K)
Printed in Japan
c
The mark
shows major revised points.
1995
DESCRIPTION
The 2SA733 is designed for use in diver stage of AF amplifier.
FEATURES
High hFE and Excellent Linearity: 200 TYP.
hFE (VCE =
6.0 V, IC = 1.0 mA)
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature
55 to +150°C
Junction Temperature
+150
°C Maximum
Maximum Power Dissipations (TA = 25
°C)
Total Power Dissipation
250 mW
Maximum Voltages and Currents (TA = 25
°C)
VCBO
Collector to Base Voltage
60 V
VCEO
Collector to Emitter Voltage
50 V
VEBO
Emitter to Base Voltage
5.0 V
IC
Collector Current
100 mA
IB
Base Current
20 mA
Note Pulse Test PW
≤ 350
s, Duty Cycle ≤ 2%
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC Current Gain
hFE
VCE =
6.0 V, IC = 1.0 mA
90
200
600
Gain Bandwidth Product
fT
VCE =
6.0 V, IE = 10 mA
180
MHz
Output Capacitance
Cob
VCB =
10 V, IE = 0, f = 1.0 MHz
4.5
pF
Collector Cutoff Current
ICBO
VCB =
60 V, IE = 0 A
0.1
A
Emitter Cutoff Current
IEBO
VEB =
5.0 V, IC = 0 A
0.1
A
Base to Emitter Voltage
VBE
ICE =
6.0 A, IC = 1.0 mA
0.58
0.62
0.68
V
Collector Saturation Voltage
VCE(sat)
IC =
100 mA, IB = 10 mA
0.18
0.3
V
CLASSIFICATION OF hFE
Rank
R
Q
P
E
Range
90 to 180
135 to 270
200 to 400
300 to 600
Remark hFE Test Conditions: VCE =
6.0 V, IC = 1.0 mA
PACKAGE DRAWING (Unit: mm)
1.27
2.54
1.77
MAX.
4.2
MAX.
13
12.7
MIN.
5.5
MAX.
5.2 MAX.
φ
0.5
2
1: Emitter
2: Collector
3: Base
EIAJ:
SC-43B
JEDEC: TO-92
IEC:
PA33
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1733KT146P | 30 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2021MLNE | 150 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2322STPP | 800 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4083 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SB1623AQ | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA733-Q | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Silicon Plastic-Encapsulate Transistor |
| 2SA733-Q-AE3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR |
| 2SA733R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA733-R | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Silicon Plastic-Encapsulate Transistor |
| 2SA733-R(A) | 制造商:Renesas Electronics Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。