参数资料
型号: 2SA812M5
厂商: RECTRON LTD
元件分类: 小信号晶体管
英文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: PLASTIC PACKAGE-3
文件页数: 1/2页
文件大小: 288K
代理商: 2SA812M5
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
MECHANICAL DATA
Case: Molded plastic
*
Epoxy: UL 94V-O rate flame retardant
*
Lead: MIL-STD-202E method 208C guaranteed
*
Mounting position: Any
*
Weight: 0.008 gram
SOT-23
2SA812
2006-3
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CLASSIFICATION OF hFE
Marking
M4
90-180
M5
135-270
200-400
M6
M7
300-600
Collector - Base Breakdown Voltage(IC= -100 mA, IE=0)
Collector - Emitter Breakdown Voltage(IC= -1mA, IB=0)
Emitter - Base Breakdown Voltage(IE= -100 mA, IC=0)
SYMBOL
MAX
MIN
TYP
-60
-50
-5
-
-0.68
MHZ
600
-0.1
90
180
V(BR)CBO
V(BR)CEO
VBE
V(BR)EBO
UNITS
V
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
Dimensions in inches and (millimeters)
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
1
3
BASE
EMITTER
COLLECTOR
2
1
3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.047(1.20)
0.055(1.40)
ICBO
hFE
m
A
m
A
Collector Cut - Off Current (VCB= -60V, IE=0)
Emitter Cut - Off Current(VEB= -5V, IC=0)
DC Current Gain(VCE= -6V, IC= -1mA)
Collector - Emitter Saturation Voltage(IC=-100 mA, IB= -10mA)
Base - Emitter Voltage(IC=-1mA, VCE= -6mA)
Tiansition Frequency(VCE= -6V, IC= -10mA)
IEBO
Range
CHARACTERISTICS
* Power dissipation
PCM :
0.2
W(Tamb=25OC)
* Collector current
ICM :
-0.1
A
* Collector-base voltage
V(BR)CBO :
-60
V
* Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
VCE(sat)
fT
-
-0.3
-
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