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参数资料
| 型号： | 2SA817-O |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | 2-5F1B, SC-43, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 357K |
| 代理商： | 2SA817-O |
2SA817
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA817
Audio Frequency Amplifier Applications
Complementary to 2SC1627.
Suitable for driver of 20~25 watts audio amplifiers.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
300
mA
Base current
IB
60
mA
Collector power dissipation
PC
600
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 5 mA, IB = 0
80
V
hFE (1)
(Note)
VCE = 2 V, IC = 50 mA
70
240
DC current gain
hFE (2)
VCE = 2 V, IC = 200 mA
40
Collector-emitter saturation voltage
VCE (sat)
IC = 200 mA, IB = 20 mA
0.4
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 5 mA
0.55
0.8
V
Transition frequency
fT
VCE = 10 V, IC = 10 mA
70
100
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
14
pF
Note: hFE (1) classification O: 70~140, Y: 120~240
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA817 | 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA817-Y | 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA817 | 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA817A-OTPE6 | 400 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA817A-Y | 400 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA817-O(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA817Y | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 300MA I(C) | TO-92 |
| 2SA817-Y(F) | 制造商:Toshiba 功能描述:PNP -80V -0.3A 120 to 240 TO92 Bulk |
| 2SA819 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-40V -.3A .3W ECB |
| 2SA820 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 180V V(BR)CEO | 30MA I(C) | TO-92 |
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