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参数资料
| 型号： | 2SA966-Y |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TO-92MOD, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 110K |
| 代理商： | 2SA966-Y |
2SA966
2004-07-07
3
Collector current IC (mA)
hFE – IC
DC
cur
re
nt
gain
h
FE
Collector current IC (mA)
VCE (sat) – IC
Col
lect
or
-e
m
itte
rs
a
tu
ra
tion
volta
g
e
V
CE
(
sa
t)
(
V
)
Base-emitter voltage VBE (V)
IC – VBE
Coll
ect
or
cur
re
nt
I
C
(m
A)
Ambient temperature Ta (°C)
PC – Ta
C
ollec
tor
po
wer
dis
si
pati
o
n
P
C
(W
)
Collector-emitter voltage VCE (V)
Safe Operating Area
C
ollect
or
c
urre
nt
I C
(
A
)
25
Ta = 100°C
1000
10
1
3
10
30
100
300
1000 3000
30
50
100
300
500
1.0
0
20
40
60
80
100
120
140
160
180
0.2
0.4
0.6
0.8
1
0.01
0.3
100 ms*
IC max (pulsed)*
*: Single nonrepetitive
pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
1
3
10
30
0.03
0.05
0.1
0.3
0.5
3
5
IC max
(continuous)
10 ms*
1 s*
1 ms*
DC operation
Ta = 25°C
VCEO max
25
Ta = 100°C
1600
0
Common emitter
VCE = 2 V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
200
400
600
800
1000
1200
1400
Collector-emitter voltage VCE (V)
IC – VCE
C
olle
ct
or
cur
re
nt
I
C
(m
A)
1600
0
Common emitter
Ta = 25°C
0
2
IB = 1 mA
2
4
6
8
10
12
14
16
200
400
600
800
1000
1200
1400
3
6
4
8
10
25
Ta = 100°C
5
0.01
1
Common emitter
IC/IB = 50
3
10
30
100
300
1000 3000
0.03
0.05
0.1
0.3
0.5
1
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA966-Y(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 30V 1.5A 3-Pin TO-92 Mod |
| 2SA967 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 30MA I(C) | MICRO-T |
| 2SA968 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA968-0 | 制造商:TT Electronics / Semelab 功能描述:PNP power transistor,2SA968 1.5A |
| 2SA968A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Silicon PNP Power Transistors |
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