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参数资料
| 型号： | 2SA970-BL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | 2-5F1B, SC-43, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 153K |
| 代理商： | 2SA970-BL |
2SA970
2003-03-24
1
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA970
Low Noise Audio Amplifier Applications
Low noise: NF = 3dB (typ.) RG = 100 , VCE = 6 V, IC = 100 A,
f = 1 kHz
: NF = 0.5dB (typ.) RG = 1 k, VCE = 6 V, IC = 100 A,
f = 1 kHz
High DC current gain: hFE = 200~700
High breakdown voltage: VCEO = 120 V
Low pulse noise. Low 1/f noise
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-120
V
Collector-emitter voltage
VCEO
-120
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-100
mA
Base current
IB
-20
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = -120 V, IE = 0
-0.1
mA
Emitter cut-off current
IEBO
VEB = -5 V, IC = 0
-0.1
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = -1 mA, IB = 0
-120
V
DC current gain
hFE
(Note)
VCE = -6 V, IC = -2 mA
200
700
Collector-emitter saturation voltage
VCE (sat)
IC = -10 mA, IB = -1 mA
-0.3
V
Base-emitter voltage
VBE
VCE = -6 V, IC = -2 mA
0.65
V
Transition frequency
fT
VCE = -6 V, IC = -1 mA
100
MHz
Collector output capacitance
Cob
VCB = -10 V, IE = 0, f = 1 MHz
4.0
pF
VCE = -6 V, IC = -0.1 mA, f = 10 Hz,
RG = 10 kW
6
VCE = -6 V, IC = -0.1 mA, f = 1 kHz,
RG = 10 kW
2
Noise figure
NF
VCE = -6 V, IC = -0.1 mA, f = 1 kHz,
RG = 100 W
3
dB
Note: hFE classification GR: 200~400, BL: 350~700
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
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PDF描述 |
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| 2SAR553PT100 | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA970-BL(F) | 制造商:Toshiba 功能描述:PNP -120V -0.1A 350 to 700 TO92 Bulk |
| 2SA970GR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA970-GR | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) |
| 2SA970-GR(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 120V 0.1A 3-Pin TO-92 |
| 2SA971 | 制造商:JMNIC 制造商全称:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon PNP Power Transistors |
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