参数资料
型号: 2SB0766Q
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: ROHS COMPLIANT, MINIP3-F1, 3 PIN
文件页数: 1/3页
文件大小: 239K
代理商: 2SB0766Q
Transistors
1
Publication date: March 2004
SJC00051DED
2SB0766, 2SB0766A (2SB766, 2SB766A)
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD0874 (2SD874), 2SD0874A (2SD874A)
■ Features
Large collector power dissipation P
C
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings T
a = 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
4.5±0.1
3.0±0.15
45
2.6
±
0.1
0.4
max.
1.6±0.2
1.5±0.1
4.0
2.5
±
0.1
3
+0.25 –0.20
1.0
+0.1 –0.2
0.5±0.08
0.4±0.04
0.4±0.08
12
3
1.5±0.1
3
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB0766
VCBO
30
V
(Emitter open)
2SB0766A
60
Collector-emitter voltage 2SB0766
VCEO
25
V
(Base open)
2SB0766A
50
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
1.5
A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Unit: mm
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SB0766
VCBO
IC = 10 A, IE = 0
30
V
(Emitter open)
2SB0766A
60
Collector-emitter voltage
2SB0766
VCEO
IC = 2 mA, IB = 0
25
V
(Base open)
2SB0766A
50
Emitter-base voltage (Collector open)
VEBO
IE
= 10 A, I
C
= 0
5V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
A
Forward current transfer ratio *
1
hFE1 *
2
VCE = 10 V, IC = 500 mA
85
340
hFE2
VCE
= 5 V, I
C
= 1 A
50
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 500 mA, IB = 50 mA
0.2
0.4
V
Base-emitter saturation voltage *
1
VBE(sat)
IC = 500 mA, IB = 50 mA
0.85 1.20
V
Transition frequency
fT
VCB
= 10 V, I
E
= 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
20
30
pF
(Common base, input open circuited)
Marking Symbol:
2SB0766: A
2SB0766A: B
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion.
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Note) The part numbers in the parenthesis show conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料
PDF描述
2SB766AR 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB766AS 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB0766S 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB0766AQ 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB772-Q 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SB0766R 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | SC-62
2SB0766S 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | SC-62
2SB0767 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type
2SB0767(2SB767) 制造商:未知厂家 制造商全称:未知厂家 功能描述:小信号デバイス - 小信号トランジスタ - 汎用低周波増幅