参数资料
型号: 2SB0788T
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 20 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: M-A1, 3 PIN
文件页数: 1/3页
文件大小: 73K
代理商: 2SB0788T
Transistors
2SB0788 (2SB788)
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SD0958 (2SD958)
s Features
q
High collector to emitter voltage VCEO.
q
Low noise voltage NV.
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
M-A1 Package
6.9±0.1
2.5±0.1
(1.0)
(1.5)
(0.85)
0.45±0.05
0.55±0.1
(2.5)
21
3
R 0.7
R 0.9
(0.4)
3.5
±0.1
4.5
±0.1
4.1
±0.2
2.4
±0.2
1.25
±0.05
2.0
±0.2
1.0
±0.1
(1.5)
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–120
–7
–50
–20
400
150
–55 ~ +150
Unit
V
mA
mW
C
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
*
VCE(sat)
fT
NV
Conditions
VCB = –50V, IE = 0
VCE = –50V, IB = 0
IC = –10A, IE = 0
IC = –1mA, IB = 0
IE = –10A, IC = 0
VCE = –5V, IC = –2mA
IC = –20mA, IB = –2mA
VCB = –5V, IE = 2mA, f = 200MHz
VCE = 40V, IC = –1mA, GV = 80dB,
Rg = 100k, Function = FLAT
min
–120
–7
180
typ
150
max
–100
–1
700
– 0.6
150
Unit
nA
A
V
MHz
mV
*h
FE Rank classification
Rank
R
S
T
hFE
180 ~ 360
260 ~ 520
360 ~ 700
Note.) The Part number in the Parenthesis shows conventional part number.
1
SJC00055AED
Publication date: August 2002
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