- 您现在的位置：买卖IC网 > PDF目录30498 > 2SB0835R (PANASONIC CORP) 1000 mA, 18 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SB0835R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 18 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SC-71, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 569K |
| 代理商： | 2SB0835R |
208
Transistor
2SB0835 (2SB835)
Silicon PNP epitaxial planer type
For low-frequency output amplification
■ Features
●
Low collector to emitter saturation voltage VCE(sat).
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC–71
3:Emitter
M Type Mold Package
6.9±0.1
0.55±0.1
0.45±0.05
1.0
±
0.1
1.0
2.5±0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
±
0.1
2.0
±
0.2
2.4
±
0.2
1.25
±
0.05
4.1
±
0.2
4.5
±
0.1
2.5
1
2
3
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
*
Tj
Tstg
Ratings
–20
–18
–5
–2
–1
1
150
–55 ~ +150
Unit
V
A
W
C
■ Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE1
*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –10V, IE = 0
VCE = –18V, IB = 0
IC = –10A, IE = 0
IC = –1mA, IB = 0
IE = –10A, IC = 0
VCE = –2V, IC = –0.5A
VCE = –2V, IC = –1.5A
IC = –1A, IB = –50mA
IC = –500mA, IB = –50mA
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –6V, IE = 0, f = 1MHz
min
–20
–18
–5
130
50
typ
200
40
max
–1
–10
280
– 0.5
–1.2
Unit
A
V
MHz
pF
*h
FE1 Rank classification
Rank
R
S
hFE1
130 ~ 210
180 ~ 280
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Note.) The Part number in the Parenthesis shows conventional part number.
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB0835 | 1000 mA, 18 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB0835S | 1000 mA, 18 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB0928P | 2 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 2SB928Q | 2 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 2SB928AP | 2 A, 180 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB0873 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type |
| 2SB0873(2SB873) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:小信号デバイス － 小信号トランジスタ － 汎用低周波増幅 |
| 2SB08730Q | 功能描述:TRANS PNP 20VCEO 5A TO-92L RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB08730R | 功能描述:TRANS PNP 20VCEO 5A TO-92L RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
发布紧急采购，3分钟左右您将得到回复。