参数资料
型号: 2SB0941AQ
厂商: PANASONIC CORP
元件分类: 功率晶体管
英文描述: 3 A, 80 V, PNP, Si, POWER TRANSISTOR
封装: SC-67, TO-220F, FULL PACK-3
文件页数: 1/3页
文件大小: 183K
代理商: 2SB0941AQ
Power Transistors
1
2SB0941, 2SB0941A
2SB0941, 2SB0941A (2SB941, 2SB941A)
(2SB941, 2SB941A)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1266 and 2SD1266A
I Features
High forward current transfer ratio h
FE which has satisfactory
linearity
Low collector to emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with one
screw
I Absolute Maximum Ratings T
C = 25°C
Unit: mm
I Electrical Characteristics T
C
= 25°C
Parameter
Symbol
Rating
Unit
Collector to base
2SB0941
VCBO
60
V
voltage
2SB0941A
80
Collector to
2SB0941
VCEO
60
V
emitter voltage
2SB0941A
80
Emitter to base voltage
VEBO
5V
Peak collector current
ICP
5A
Collector current
IC
3A
Collector power
TC = 25
°CP
C
35
W
dissipation
Ta = 25
°C2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff
2SB0941
ICES
VCE =
60 V, V
BE = 0
200
A
current
2SB0941A
VCE = 80 V, VBE = 0
200
Collector cutoff
2SB0941
ICEO
VCE =
30 V, I
B = 0
300
A
current
2SB0941A
VCE =
60 V, I
B = 0
300
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
1mA
Collector to emitter
2SB0941
VCEO
IC =
30 mA, I
B = 0
60
V
voltage
2SB0941A
80
Forward current transfer ratio
hFE1 *
VCE = 4 V, IC = 1 A
70
250
hFE2
VCE =
4 V, I
C =
3 A
10
Base to emitter voltage
VBE
VCE =
4 V, I
C =
3 A
1.8
V
Collector to emitter saturation voltage
VCE(sat)
IC = 3 A, IB = 0.375 A
1.2
V
Transition frequency
fT
VCE =
10 V, I
C =
0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC =
1 A, I
B1 =
0.1 A, I
B2 = 0.1 A
0.5
s
Storage time
tstg
1.2
s
Fall time
tf
0.3
s
Rank
Q
P
hFE1
70 to 150
120 to 250
Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the
rank classification.
10.0±0.2
5.5±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±0.2
φ 3.1±0.1
1 : Base
2 : Collector
3 : Emitter
EIAJ : SC-67
TO-220F Package
Note) *: Rank classification
Note.) The Part numbers in the Parenthesis show conventional part number.
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料
PDF描述
2SB0941P 3 A, 60 V, PNP, Si, POWER TRANSISTOR
2SB0944Q 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB944Q 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB0946R 7 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB946Q 7 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
相关代理商/技术参数
参数描述
2SB0941P 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB
2SB0941PQ 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB
2SB0941Q 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB
2SB0942 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Low-Frequency Power Amplification
2SB0942(2SB942) 制造商:未知厂家 制造商全称:未知厂家 功能描述:パワーデバイス - パワートランジスタ - 汎用電力増幅