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参数资料
| 型号： | 2SB0942PQ |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 62K |
| 代理商： | 2SB0942PQ |
Power Transistors
1
2SB0942, 2SB0942A
2SB0942, 2SB0942A (2SB942, 2SB942A)
(2SB942, 2SB942A)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1267 and 2SD1267A
I Features
High forward current transfer ratio h
FE which has satisfactory
linearity
Low collector to emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with one
screw
I Absolute Maximum Ratings T
C = 25°C
Unit: mm
I Electrical Characteristics T
C
= 25°C
Parameter
Symbol
Rating
Unit
Collector to base
2SB0942
VCBO
60
V
voltage
2SB0942A
80
Collector to
2SB0942
VCEO
60
V
emitter voltage
2SB0942A
80
Emitter to base voltage
VEBO
5V
Peak collector current
ICP
8A
Collector current
IC
4A
Collector power
TC = 25
°CP
C
40
W
dissipation
Ta = 25
°C2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff
2SB0942
ICES
VCE =
60 V, V
BE = 0
400
A
current
2SB0942A
VCE = 80 V, VBE = 0
400
Collector cutoff
2SB0942
ICEO
VCE =
30 V, I
B = 0
700
A
current
2SB0942A
VCE =
60 V, I
B = 0
700
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
1mA
Collector to emitter
2SB0942
VCEO
IC =
30 mA, I
B = 0
60
V
voltage
2SB0942A
80
Forward current transfer ratio
hFE1 *
VCE = 4 V, IC = 1 A
70
250
hFE2
VCE =
4 V, I
C =
3 A
15
Base to emitter voltage
VBE
VCE =
4 V, I
C =
3 A
2V
Collector to emitter saturation voltage
VCE(sat)
IC = 4 A, IB = 0.4 A
1.5
V
Transition frequency
fT
VCE =
10 V, I
C =
0.1 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC =
4 A, I
B1 =
0.4 A, I
B2 = 0.4 A
0.2
s
Storage time
tstg
0.5
s
Fall time
tf
0.2
s
Rank
Q
P
hFE1
70 to 150
120 to 250
Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the
rank classification.
10.0±0.2
5.5±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±0.2
φ 3.1±0.1
1 : Base
2 : Collector
3 : Emitter
EIAJ : SC-67
TO-220F Package
Note) *: Rank classification
Note.) The Part numbers in the Parenthesis show conventional part number.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB942PQ | 4 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SB0942Q | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB942R | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB0942AP | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB0942P | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB0942Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB09430P | 功能描述:TRANS PNP LF 80VCEO 3A TO-220F RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB0943P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-220F |
| 2SB0943Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-220F |
| 2SB0944 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Power Switching |
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