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参数资料
| 型号： | 2SB0947AP |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | SC-67, TO-220F-A1, FULL PACK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 253K |
| 代理商： | 2SB0947AP |
Power Transistors
1
Publication date: April 2003
SJD00026BED
2SB0947 (2SB947), 2SB0947A (2SB947A)
Silicon PNP epitaxial planar type
For low-voltage switcing
■ Features
Low collector-emitter saturation voltage V
CE(sat)
High-speed switching
Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings T
C = 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB0947
VCBO
40
V
(Emitter open)
2SB0947A
50
Collector-emitter voltage 2SB0947
VCEO
20
V
(Base open)
2SB0947A
40
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
10
A
Peak collector current
ICP
15
A
Collector power
PC
35
W
dissipation
Ta
= 25°C2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SB0947
VCEO
IC = 10 mA, IB = 0
20
V
(Base open)
2SB0947A
40
Collector-base cutoff
2SB0947
ICBO
VCB
= 40 V, I
E
= 0
50
A
current (Emitter open)
2SB0947A
VCB = 50 V, IE = 0
50
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
50
A
Forward current transfer ratio
hFE1
VCE
= 2 V, I
C
= 0.1 A
45
hFE2 *
VCE = 2 V, IC = 2 A
60
260
Collector-emitter saturation voltage
VCE(sat)
IC = 7 A, IB = 0.23 A
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC
= 7 A, I
B
= 0.23 A
1.5
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 10 MHz
150
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
200
pF
(Common base, input open circuited)
Turn-on time
ton
IC = 2 A, IB1 = 66 mA, IB2 = 66 mA
0.1
s
Storage time
tstg
VCC
= 20 V
0.5
s
Fall time
tf
0.1
s
Note) The part numbers in the parenthesis show conventional part number.
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
60 to 120
90 to 180
130 to 260
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SB0947Q | 10 A, 20 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB0947P | 10 A, 20 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB947P | 10 A, 20 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB947Q | 10 A, 20 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB947AP | 10 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB0948 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Low-Voltage Switching |
| 2SB0948(2SB948) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:パワーデバイス － パワートランジスタ － 汎用電力増幅 |
| 2SB09480P | 功能描述:TRANS PNP 20VCEO 10A TO-220F RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB0948A | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Low-Voltage Switching |
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