- 您现在的位置：买卖IC网 > PDF目录30498 > 2SB0950AP (PANASONIC CORP) 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB PDF资料下载
参数资料
| 型号： | 2SB0950AP |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220F-A1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 205K |
| 代理商： | 2SB0950AP |
Power Transistors
1
Publication date: April 2003
c
2SB0950 (2SB950), 2SB0950A (2SB950A)
Silicon PNP epitaxial planar type darlington
For power amplification and switching
Complementary to 2SD1276 and 2SD1276A
■ Features
High forward current transfer ratio h
FE
High-speed switching
Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB0950
VCBO
60
V
(Emitter open)
2SB0950A
80
Collector-emitter voltage 2SB0950
VCEO
60
V
(Base open)
2SB0950A
80
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
4A
Peak collector current
ICP
8A
Collector power
PC
40
W
dissipation
Ta = 25°C2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SB0950
VCEO
IC = 30 mA, IB = 0
60
V
(Base open)
2SB0950A
80
Base-emitter voltage
VBE
VCE
= 3 V, I
C
= 3 A
2.5
V
Collector-base cutoff
2SB0950
ICBO
VCB = 60 V, IE = 0
200
A
current (Emitter open)
2SB0950A
VCB = 80 V, IE = 0
200
Collector-emitter cutoff
2SB0950
ICEO
VCE
= 30 V, I
B
= 0
500
A
current (Base open)
2SB0950A
VCE = 40 V, IB = 0
500
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
2mA
Forward current transfer ratio
hFE1
VCE
= 3 V, I
C
= 0.5 A
1 000
hFE2 *
VCE = 3 V, IC = 3 A
1 000
10 000
Collector-emitter saturation voltage
VCE(sat)1
IC = 3 A, IB = 12 mA
2V
VCE(sat)2
IC
= 5 A, I
B
= 20 mA
4V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC = 3 A, IB1 = 12 mA, IB2 = 12 mA
0.3
s
Storage time
tstg
VCC
= 50 V
2
s
Fall time
tf
0.5
s
Note) The part numbers in the parenthesis show conventional part number.
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
1 000 to 2 500
2 000 to 5 000 4 000 to 10 000
Internal Connection
B
C
E
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB0950AR | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB0954AQ | 1 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2SB0954P | 1 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SB954P | 1 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SB954AQ | 1 A, 80 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB0950AQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB0950P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB0950Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB0951 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For midium-speed switching |
| 2SB0951(2SB951) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:パワーデバイス － パワートランジスタ － 汎用電力増幅 |
发布紧急采购，3分钟左右您将得到回复。