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参数资料
| 型号： | 2SB0956G-R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, MINIP3-F2, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 210K |
| 代理商： | 2SB0956G-R |
Transistors
1
Publication date: September 2007
SJD00331AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0956G
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD1280G
■ Features
Large collector power dissipation P
C
Low collector-emitter saturation voltage V
CE(sat)
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
20
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
2A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
hFE1
130 to 210
180 to 280
Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board
thickness of 1.7 mm for the collector portion
Marking Symbol: H
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
20
V
Emiter-base voltage (Collector open)
VEBO
IE
= 10 A, I
C
= 0
5V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
1
A
Forward current transfer ratio *
1
hFE1 *
2
VCE = 2 V, IC = 500 mA
130
280
hFE2
VCE
= 2 V, I
C
= 1.5 A
50
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 1 A, IB = 50 mA
0.5
V
Base-emitter saturation voltage *
1
VBE(sat)
IC = 500 mA, IB = 50 mA
1.2
V
Transition frequency
fT
VCB
= 6 V, I
E
= 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = 6 V, IE = 0, f = 1 MHz
40
pF
(Common base, input open circuited)
■ Package
Code
MiniP3-F2
Pin Name
1: Base
2: Collector
3: Emitter
■ Marking Symbol: H
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
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| 2SB0956GRL | 功能描述:TRANS PNP 20VCEO 1A MINIP-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB0956R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SC-62 |
| 2SB0956S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SC-62 |
| 2SB0968 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Low-Frequency Output Amplification |
| 2SB0968(2SB968) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:パワーデバイス － パワートランジスタ － 汎用電力増幅 |
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