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参数资料
| 型号： | 2SB0976 |
| 英文描述： | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 中文描述： | 小信号装置-小信号晶体管-一般使用低频Amplifires |
| 文件页数： | 2/3页 |
| 文件大小： | 84K |
| 代理商： | 2SB0976 |
2SB0928, 2SB0928A
2
SJD00010BED
VCE(sat) IC
hFE IC
fT IC
PC Ta
IC VCE
IC VBE
Safe operation area
Rth t
0
160
40
120
80
10
30
20
40
(1)TC
= T
a
(2)With a 50 mm
× 50 mm × 2 mm
Al heat sink
(3)Without heat sink
(PC
= 1.3 W)
(1)
(2)
(3)
Collector
power
dissipation
P
C
(W)
Ambient temperature T
a (°C)
0
12
2
10
4
8
6
600
500
400
300
200
100
TC
= 25°C
4.0 mA
3.5 mA
3.0 mA
2.5 mA
2.0 mA
1.5 mA
1.0 mA
0.5 mA
IB
= 4.5 mA
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
0
1.0
0.8
0.6
0.4
– 0.2
0
– 0.4
– 0.8
–1.2
–2.0
–1.6
VCE
= 10 V
25
°C
25°C
TC
= 100°C
Base-emitter voltage V
BE (V)
Collector
current
I
C
(A)
0.01
0.1
1
10
0.1
1
IC / IB
= 10
TC
= 100°C
25
°C
25°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V)
Collector current I
C (A)
0.01
0.1
1
10
1
10
VCE
= 10 V
TC
= 100°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
102
104
103
0.01
0.1
1
10
1
10
VCE
= 10 V
f
= 10 MHz
TC
= 25°C
Transition
frequency
f
T
(MHz)
Collector current I
C (A)
102
104
103
–1
–10
–100
–1 000
– 0.01
–10
–1
– 0.1
Non repetitive pulse
TC
= 25°C
t
= 1 ms
t
= 5 ms
2SB0928A
2SB0928
ICP
IC
t
= 0.5 ms
t
= 300 ms
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
102
101
1
10
103
102
104
103
102
10
1
101
102
103
(1)
(2)
(1)Without heat sink
(2)With a 50 mm
× 50 mm × 2 mm Al heat sink
Time t (s)
Thermal
resistance
R
th
(°
C/W)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB976 | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB0948A | Power Device - Power Transistors - General-Purpose power amplification |
| 2SB948A | Power Device - Power Transistors - General-Purpose power amplification |
| 2SB0949 | Power Device - Power Transistors - General-Purpose power amplification |
| 2SB949 | Power Device - Power Transistors - General-Purpose power amplification |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB09760RA | 功能描述:TRANS PNP 18VCEO 5A TO-92 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB0976Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 5A I(C) | TO-92 |
| 2SB0976R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 5A I(C) | TO-92 |
| 2SB1000 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-62-25V -1A 1W ECB SURFACE MOUNT |
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