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参数资料
| 型号： | 2SB1001BH |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 16 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | UPAK-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 46K |
| 代理商： | 2SB1001BH |
2SB1001
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–20
V
Collector to emitter voltage
V
CEO
–16
V
Emitter to base voltage
V
EBO
–6
V
Collector current
I
C
–2
A
Collector peak current
i
C(peak) *
1
–3
A
Collector power dissipation
P
C*
2
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5
× 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–20
—
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–16
—
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–6
——V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
—
–0.1
AV
CB = –16 V, IE = 0
Emitter cutoff current
I
EBO
—
–0.1
AV
EB = –5 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
320
V
CE = –2 V,
I
C = –0.1 A (Pulse test)
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.15
–0.3
V
I
C = –1 A,
I
B = –0.1 A (Pulse test)
Base to emitter saturation
voltage
V
BE(sat)
—
–1.0
–1.2
V
I
C = –1 A,
I
B = –0.1 A (Pulse test)
Gain bandwidth product
f
T
—
150
—
MHz
V
CE = –2 V,
I
C = –10 mA
Collector output capacitance
Cob
—
50
—
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SB1001 is grouped by h
FE as follows.
Mark
BH
BJ
h
FE
100 to 200
160 to 320
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB1001BJ | 2000 mA, 16 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1002-CH | SMALL SIGNAL TRANSISTOR |
| 2SB1015O | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SB1015Y | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SB1016A | 5 A, 100 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1001BJ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SB1001BJTR-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB1002 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB1002CH | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-243 |
| 2SB1002CJ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-243 |
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