参数资料
型号: 2SB1025DJTL-E
元件分类: 小信号晶体管
英文描述: 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: LEAD FREE, SC-62, UPAK-3
文件页数: 1/3页
文件大小: 67K
代理商: 2SB1025DJTL-E
Rev.2.00 Aug 10, 2005 page 1 of 5
2SB1025
Silicon PNP Epitaxial
REJ03G0661-0200
(Previous ADE-208-1036)
Rev.2.00
Aug.10.2005
Application
Low frequency power amplifier
Complementary pair with 2SD1418
Outline
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
4
1
2
3
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK R )
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–120
V
Collector to emitter voltage
VCEO
–80
V
Emitter to base voltage
VEBO
–5
V
Collector current
IC
–1
A
Collector peak current
iC(peak)*
1
–2
A
Collector power dissipation
PC*
2
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5
× 20 × 0.7 mm)
相关PDF资料
PDF描述
2SB1025DJ 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1025DK 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1025DH 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1026DMTL-E 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1026DM SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SB1025DK 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-243
2SB1026 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon PNP Epitaxial
2SB1026DL 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-243
2SB1026DM 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-243
2SB1026DMTL-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial