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参数资料
| 型号： | 2SB1026DM |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 封装： | UPAK-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 23K |
| 代理商： | 2SB1026DM |
2SB1026
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–120
V
Collector to emitter voltage
V
CEO
–100
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–1
A
Collector peak current
i
C(peak)*
1
–2
A
Collector power dissipation
P
C*
2
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5
× 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–120
—
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–100
—
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
——V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
—
–10
AV
CB = –100 V, IE = 0
DC current transfer ratio
h
FE1*
1
60
—
200
V
CE = –5 V, IC = –150 mA
h
FE2
30
—
V
CE = –5 V,
I
C = –500 mA (Pulse test)
Collector to emitter saturation
voltage
V
CE(sat)
——
–1
V
I
C = –500 mA,
I
B = –50 mA (Pulse test)
Base to emitter voltage
V
BE
—
–0.9
V
CE = –5 V, IC = –150 mA
Gain bandwidth product
f
T
—
140
—
MHz
V
CE = –5 V, IC = –150 mA
Collector output capacitance
Cob
—
20
—
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SB1026 is grouped by h
FE1 as follows.
Mark
DL
DM
h
FE1
60 to 120
100 to 200
See characteristic curves of 2SB1025.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1026DMTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB1026DMTR(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SB1027 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon PNP Epitaxial |
| 2SB1027EH | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SB1027EJ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
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