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参数资料
| 型号： | 2SB1058B |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 2/4页 |
| 文件大小： | 17K |
| 代理商： | 2SB1058B |
2SB1058
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–20
V
Collector to emitter voltage
V
CEO
–16
V
Emitter to base voltage
V
EBO
–6
V
Collector current
I
C
–2
A
Collector power dissipation
P
C
0.75
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–20
—
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–16
—
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–6
—
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
—
–2
A
V
CB = –16 V, IE = 0
Emitter cutoff current
I
EBO
—
–0.2
A
V
EB = –6 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
320
V
CE = –2 V, IC = –0.1 A
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.3
V
I
C = –1 A, IB = –0.1 A
Gain bandwidth product
f
T
—
80
—
MHz
V
CE = –2 V, IC = –10 mA
Collector output capacitance
Cob
—
50
—
pF
V
CB = –10 V, IE = 0, f = 1 MHz
Note:
1. The 2SB1058 is grouped by h
FE as follows.
B
C
100 to 200
160 to 320
See characteristic curves of 2SB738.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1059 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SB1059B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-92 |
| 2SB1059C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-92 |
| 2SB1061 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon PNP Triple Diffused Low Frequency Power Amplifier |
| 2SB1062 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Si PNP Epitaxial Plannar |
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