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参数资料
| 型号： | 2SB1071AR |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | SC-67, TO-220F-A1, FULL PACK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 213K |
| 代理商： | 2SB1071AR |
Power Transistors
1
Publication date: February 2003
SJD00041AED
2SB1071, 2SB1071A
Silicon PNP epitaxial planar type
For low-voltage switching
■ Features
Low collector-emitter saturation voltage V
CE(sat)
High-speed switching
Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB1071
VCBO
40
V
(Emitter open)
2SB1071A
50
Collector-emitter voltage 2SB1071
VCEO
20
V
(Base open)
2SB1071A
40
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
4A
Peak collector current
ICP
8A
Collector power dissipation
PC
25
W
Ta = 25°C2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SB1071
VCEO
IC = 10 mA, IB = 0
20
V
(Base open)
2SB1071A
40
Collector-base cutoff
2SB1071
ICBO
VCB = 40 V, IE = 0
50
A
current (Emitter open)
2SB1071A
VCB = 50 V, IE = 0
50
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 5 V, I
C
= 0
50
A
Forward current transfer ratio
hFE1
VCE = 2 V, IC = 0.1 A
45
hFE2 *
VCE = 2 V, IC = 1 A
60
260
Collector-emitter saturation voltage
VCE(sat)
IC
= 2 A, I
B
= 0.1 A
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC = 2 A, IB = 0.1 A
1.5
V
Transition frequency
fT
VCE = 5 V, IC = 0.5 A, f = 10 MHz
150
MHz
Turn-on time
ton
IC
= 2 A, I
B1
= 0.2 A, I
B2
= 0.2 A
0.3
s
Storage time
tstg
VCC = 20 V
0.4
s
Fall time
tf
0.1
s
Rank
R
Q
P
hFE2
60 to 120
90 to 180
130 to 260
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1071P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 4A I(C) | SOT-186 |
| 2SB1071Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 4A I(C) | SOT-186 |
| 2SB1071R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 4A I(C) | SOT-186 |
| 2SB1072 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon PNP Triple Diffused |
| 2SB1072(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-251AA |
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