参数资料
型号: 2SB1094-L-AZ
元件分类: 功率晶体管
英文描述: 3 A, 60 V, PNP, Si, POWER TRANSISTOR
文件页数: 1/4页
文件大小: 120K
代理商: 2SB1094-L-AZ
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1998
Document No. D16186EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB1094
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIER
DATA SHEET
2002
FEATURES
The 2SB1094 features ratings covering a wide range of
applications and is ideal for power supplies or a variety of drives
in audio and other equipment.:
VCEO
≥ 60 V, VEBO ≥ 7.0 V, IC(DC) ≤ 3.0 A
Mold package that does not require an insulating board or
insulation bushing
Complementary transistor with 2SD1585
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
3.0
A
Collector current (pulse)
IC(pulse)*
5.0
A
Base current (DC)
IB(DC)
0.6
A
Total power dissipation
PT (Tc = 25
°C)
15
W
Total power dissipation
PT (Ta = 25
°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
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相关代理商/技术参数
参数描述
2SB1094M 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | SOT-186
2SB1096 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon PNP Power Transistors
2SB1097 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors
2SB1097-AZ-K 制造商:Renesas Electronics Corporation 功能描述:
2SB1097-AZ-L 制造商:Renesas Electronics Corporation 功能描述: