参数资料
型号: 2SB1110C
元件分类: 功率晶体管
英文描述: 0.1 A, 200 V, PNP, Si, POWER TRANSISTOR
封装: TO-126MOD, 3 PIN
文件页数: 1/5页
文件大小: 34K
代理商: 2SB1110C
2SB1109, 2SB1110
Silicon PNP Epitaxial
Application
Low frequency high voltage amplifier complementary pair with 2SD1609 and 2SD1610
Outline
1
2
3
TO-126 MOD
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings (Ta = 25
°C)
Ratings
Item
Symbol
2SB1109
2SB1110
Unit
Collector to base voltage
V
CBO
–160
–200
V
Collector to emitter voltage
V
CEO
–160
–200
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–100
mA
Collector power dissipation
P
C
1.25
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–45 to +150
°C
相关PDF资料
PDF描述
2SB1109D 0.1 A, 160 V, PNP, Si, POWER TRANSISTOR
2SB1109B 0.1 A, 160 V, PNP, Si, POWER TRANSISTOR
2SB1114ZM 2 A, 20 V, PNP, Si, POWER TRANSISTOR
2SB1114ZL 2 A, 20 V, PNP, Si, POWER TRANSISTOR
2SB1115AYQ 1 A, 60 V, PNP, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
2SB1110D 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-126
2SB1114 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB1114-T1-AZ(ZK) 制造商:Renesas Electronics Corporation 功能描述:
2SB1114-T1-AZ-ZL 制造商:Renesas Electronics Corporation 功能描述:
2SB1114ZK 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT