参数资料
型号: 2SB1127R
元件分类: 小信号晶体管
英文描述: 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126
封装: TO-126, 3 PIN
文件页数: 1/4页
文件大小: 34K
代理商: 2SB1127R
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
20V/5A Switching Applications
Ordering number:ENN2452
2SB1127
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13004TN (KT)/92098HA (KT)/4157TA, TS No.2452–1/4
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
5
2
V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
2
V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
5
V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
5
A
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
8
A
t
n
e
r
u
C
e
s
a
BIB
5
.
0
A
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
1W
0
1W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2009B
[2SB1127]
Applications
Strobe, power supplies, relay drivers, lamp drivers.
Features
Adoption of FBET, MBIT processes.
Low saturation voltage.
Large current capacity.
Fast switching speed.
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
2
=
E 0
=0
0
5
A
n
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
4
=
C 0
=0
0
5
A
n
i
a
G
t
n
e
r
u
C
D
h E
F 1V E
C
I
,
V
2
=
C
A
m
0
5
=*
0
1*
0
4
h E
F 2V E
C
I
,
V
2
=
C
A
4
=0
6
Tc=25C
8.0
4.0
7.0
11.0
1.5
15.5
3.0
1.6
0.8
0.6
0.5
2.7
4.8
2.4
1.2
12
3
3.0
* : The 2SB1127 is classified by 500mA hFE as follows :
Continued on next page.
k
n
a
RR
S
T
h E
F
0
2
o
t
0
10
8
2
o
t
0
4
10
0
4
o
t
0
2
相关PDF资料
PDF描述
2SB1131S 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1131T 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1131R 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1131 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226
2SB1131-T 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SB1127S 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126
2SB1127T 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126
2SB1130AM 制造商:ROHM 制造商全称:Rohm 功能描述:Epitaxial Planar PNP Silicon Transistor
2SB1130M 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | SIP
2SB1131 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Strobe,High-Current Switching Applications