参数资料
型号: 2SB1131-S
元件分类: 小信号晶体管
英文描述: 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: MP, 3 PIN
文件页数: 1/4页
文件大小: 35K
代理商: 2SB1131-S
2SB1131
No.2420-1/4
Applications
Flash, power supplies, relay drivers, lamp drivers.
Features
Adoption of FBET, MBIT processes.
Low saturation voltage.
Large current capacity.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
--25
V
Collector-to-Emitter Voltage
VCEO
--20
V
Emitter-to-Base Voltage
VEBO
--5
V
Collector Current
IC
--5
A
Collector Current (Pulse)
ICP
--8
A
Collector Dissipation
PC
1W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=--20V, IE=0
--500
nA
Emitter Cutoff Current
IEBO
VEB=--4V, IC=0
--500
nA
DC Current Gain
hFE1VCE=--2V, IC=--500mA
100*
400*
hFE2VCE=--2V, IC=--4A
60
Gain-Bandwidth Product
fT
VCE=--5V, IC=--200mA
320
MHz
* : The 2SB1131 is classified by 500mA hFE as follows :
Continued on next page.
Ordering number : ENN2420C
32505TN (PC)/O2003TN (KOTO)/92098HA (KT)/8270MH/521TA, TS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2SB1131
PNP Epitaxial Planar Silicon Transistor
Flash, High-Current Switching
Applications
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
相关PDF资料
PDF描述
2SB1131-R 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1131 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226
2SB926-R 2000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SB926-R 2000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SC3382-R 200 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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