- 您现在的位置：买卖IC网 > PDF目录142673 > 2SB1135S 7 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB PDF资料下载
参数资料
| 型号： | 2SB1135S |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220ML, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 40K |
| 代理商： | 2SB1135S |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
50V/7A Switching Applications
Ordering number:ENN2094B
2SB1135/2SD1668
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2003TN (KOTO)/92098HA (KT)/10996TS (KOTO) 8-8812/4287TA, TS No.2094–1/4
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
0
6
)
–
(V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
5
)
–
(V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
6
)
–
(V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
7
)
–
(A
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
2
1
)
–
(A
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
2W
0
3W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
( ) : 2SB1135
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2041A
[2SB1135/2SD1668]
Applications
Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
Features
Low-saturation collector-to-emitter voltage :
VCE(sat)=–0.4V max.
Wide ASO leading to high resistance to breakdown.
Micaless package facilitating mounting.
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
C
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
4
)
–
(
=
E 0
=1
.
0
)
–
(A
m
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
4
)
–
(
=
C 0
=1
.
0
)
–
(A
m
n
i
a
G
t
n
e
r
u
C
D
h E
F 1V E
C
I
,
V
2
)
–
(
=
C
A
1
)
–
(
=*
0
7*
0
8
2
h E
F 2V E
C
I
,
V
2
)
–
(
=
C
A
5
)
–
(
=0
3
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
-
n
i
a
GfT
V E
C
I
,
V
5
)
–
(
=
C
A
1
)
–
(
=0
1z
H
M
* : The 2SB1135/2SD1668 are classified by 1A hFE as follows :
Continued on next page.
Tc=25C
k
n
a
RQ
R
S
h E
F
0
4
1
o
t
0
70
0
2
o
t
0
10
8
2
o
t
0
4
1
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.55
2.4
4.5
2.8
0.7
2.55
2.4
1
23
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD0661 | 100 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2N6426RLRA | 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N6758TXV | 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 2N6770TX | 12 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 2N6770TXV | 12 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1136 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB1136Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-220VAR |
| 2SB1136R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-220VAR |
| 2SB1136S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-220VAR |
| 2SB1140 | 制造商:-- 功能描述:5 A, 20 V, PNP, Si, POWER TRANSISTOR, TO-126 |
发布紧急采购，3分钟左右您将得到回复。