- 您现在的位置：买卖IC网 > PDF目录30583 > 2SB1144S 1.5 A, 100 V, PNP, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SB1144S |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1.5 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-126ML, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 146K |
| 代理商： | 2SB1144S |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
100V/1.5A Switching Applications
Ordering number:2041A
2SB1144/2SD1684
92098HA (KT)/10996TS (KOTO) 8-8500/4107KI/6106AT, TS No.2041–1/4
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
0
2
1
)
–
(V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
1
)
–
(V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
6
)
–
(V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
5
.
1
)
–
(A
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
0
.
2
)
–
(A
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
5
.
1W
0
1W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
( ) : 2SB1144
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2042B
[2SB1144/2SD1684]
Features
Adoption of FBET and MBIT processes.
High breakdown voltage.
Low saturation voltage.
Plastic-covered heat sink facilitating high-density
mounting.
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Tc=25C
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
1
)
–
(
=
E 0
=0
0
1
)
–
(A
n
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
4
)
–
(
=
C 0
=0
0
1
)
–
(A
n
i
a
G
t
n
e
r
u
C
Dh E
F 1V E
C
I
,
V
5
)
–
(
=
C
A
m
0
1
)
–
(
=
*
0
1*
0
4
h E
F 2V E
C
I
,
V
5
)
–
(
=
C
A
1
)
–
(
=
0
3
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
-
n
i
a
GfT
V E
C
I
,
V
0
1
)
–
(
=
C
A
m
0
5
)
–
(
=
)
0
1
(z
H
M
0
2
1z
H
M
e
c
n
a
t
i
c
a
p
a
C
t
u
p
t
u
OC b
o
V B
C
z
H
M
1
=
f
,
V
0
1
)
–
(
=)
8
1
(
1
1F
p
* : The 2SB1144/2SD1684 are classified by 100mA hFE as follows :
0
2
Q
0
10
8
2
S
0
4
10
0
4
T
0
2
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1684S | 1.5 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SB1144T | 1.5 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 2SD1691G-Y-TA3-T | 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1691L-Y-T6C-K | 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD1691G-O-TF1-T | 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1144T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SB1145 | 制造商:JMNIC 制造商全称:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon PNP Power Transistors |
| 2SB1148 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1148/2SB1148A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SB1148. 2SB1148A - PNP Transistor |
| 2SB1148A | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type(For low-voltage switching) |
发布紧急采购，3分钟左右您将得到回复。