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参数资料
| 型号： | 2SB1156P |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 20 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封装： | ROHS COMPLIANT, TOP-3F-A1, SC-92, FULL PACK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 250K |
| 代理商： | 2SB1156P |
Power Transistors
1
Publication date: March 2003
SJD00044BED
2SB1156
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1707
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory linearity of forward current transfer ratio h
FE
Large collector current I
C
Full-pack package which can be installed to the heat sink with one
screw
■ Absolute Maximum Ratings T
C = 25°C
■ Electrical Characteristics T
C = 25°C ± 3°C
15.0±0.3
5.0±0.2
11.0±0.2
2.0±0.2
2.0±0.1
0.6±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
21.0
±
0.5
16.2
±
0.5
Solder
Dip
(3.5)
15.0
±
0.2
(0.7)
φ 3.2±0.1
(3.2)
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
130
V
Collector-emitter voltage (Base open)
VCEO
80
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
20
A
Peak collector current
ICP
30
A
Collector power dissipation
PC
100
W
Ta = 25°C3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 10 mA, IB = 0
80
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 100 V, IE = 0
10
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 5 V, I
C
= 0
50
A
Forward current transfer ratio
hFE1
VCE = 2 V, IC = 0.1 A
45
hFE2 *
VCE = 2 V, IC = 3 A
60
260
hFE3
VCE
= 2 V, I
C
= 10 A
30
Collector-emitter saturation voltage
VCE(sat)1
IC = 8 A, IB = 0.4 A
0.5
V
VCE(sat)2
IC = 20 A, IB = 2 A
1.5
Base-emitter saturation voltage
VBE(sat)1
IC
= 8 A, I
B
= 0.4 A
1.5
V
VBE(sat)2
IC = 20 A, IB = 2 A
2.5
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC = 8 A, IB1 = 0.8 A, IB2 = 0.8 A
0.5
s
Storage time
tstg
VCC = 50 V
1.0
s
Fall time
tf
0.2
s
Rank
R
Q
P
hFE2
60 to 120
90 to 180
130 to 260
Ordering can be made by the common rank (PQ rank
hFE2 = 60 to 240) in the rank classification.
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
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|---|---|
| 2SB1156Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 20A I(C) | TO-247VAR |
| 2SB1156R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 20A I(C) | TO-247VAR |
| 2SB1157 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB1158 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
| 2SB1159 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
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