参数资料
型号: 2SB1188-Q
厂商: MICRO COMMERCIAL COMPONENTS
元件分类: 小信号晶体管
英文描述: 2000 mA, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: PLASTIC PACKAGE-3
文件页数: 1/2页
文件大小: 237K
代理商: 2SB1188-Q
PNP
Plastic-Encapsulate
Transistors
Features
Power dissipation: PCM = 0.5W(Tamb=25 )
Collector current: ICM = -2A
Collector-base voltage: V(BR)CBO = -40V
Operating and storage junction temperature range
TJ, Tstg: -55
to + 150
Electrical Characteristics @ 25
Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Unit
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-50
A, IE=0)
-40
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector cut-off Current
(VCB=-20V, IE=0)
---
-1.0
IEBO
Emitter cut-off Current
(VEB=-4V, IC=0)
---
-1.0
hFE
DC current gain *
(VCE=-3V, IC=-0.5A)
82
---
390
---
VCE(sat)
Collector-Emitter Saturation Voltage*
(IC=-2A, IB=-0.2A)
---
-0.8
fT
Transition Frequency
(VCE=-5.0Vdc, IC=-0.5Adc,F=30MHZ)
Cob
output capacitance
(VCB=-10V, IE=0, f=1MHz)
---
CLASSIFICATION OF hFE
Rank
P
Q
R
Range
82-180
120-270
180-390
Marking
BCP
BCQ
BCR
A
B
C
D
G
H
F
E
K
J
SOT-89
omponents
20736 Marilla
Street Chatsworth
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$% !"#
MCC
Revision:
4
2007/0
7/13
TM
Micro Commercial Components
E
B
C
---
MHZ
---
65
---
PF
-32
uA
V
uA
(IC=-1mA, IB=0)
(IE=-50
A, IC=0)
---
-5.0
V
80
---
* Measured using pulse current.
2SB1188-Q
2SB1188-P
2SB1188-R
www.mccsemi.com
1 of 2
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