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参数资料
| 型号： | 2SB1197KT146Q |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SMT3, SC-59, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 46K |
| 代理商： | 2SB1197KT146Q |
2SB1197K
Transistors
Rev.A
2/2
Packaging specifications and hFE
Package
Code
Basic ordering unit (pieces)
Taping
T146
3000
QR
hFE
2SB1197K
Type
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270
180 to 390
Electrical characteristic curves
Fig.1
Grounded emitter propagation
characteristics
0
0.4
0.8
1.2
1.6
1000
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
Ta
=25
°C
VCE
=6V
COLLECTOR
CURRENT
:
I
C
(mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.2
Grounded emitter output
characteristics ( )
4
0
8
12
16
20
0
40
120
80
160
200
20
100
60
140
180
1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
IB
=0mA
Ta
=25°C
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.3
Grounded emitter output
characteristics (
)
0.2
0
0.4
0.6
0.8
1.0
0
100
300
200
400
500
12mA 10mA
8mA
6mA
4mA
IB= 2mA
14mA
16mA
18mA
20mA
Ta
=25°C
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.4
DC current gain vs.
collector current
Ta
=25°C
1m
10m
100m
1
20
10
5
2
50
100
200
500
1k
VCE
= 3V
2V
1V
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(A)
Fig.5
Collector-emitter saturation
voltage vs. collector current
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(mV)
COLLECTOR CURRENT : IC
(A)
Ta
=25°C
1m
10m
100m
1
20
10
5
2
50
200
100
500
1000
IC/IB
=50
20
10
Fig.6
Gain bandwidth product vs.
emitter current
EMITTER CURRENT : IE
(A)
TRANSITION
FREQUENCY
:
f
T
(MHz)
Ta
=25
°C
VCE
= 5V
1m
10m
100m
1
50
20
10
5
2
1
100
200
500
1000
Fig.7
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : VCB
(V)
EMITTER TO BASE VOLTAGE
: VEB
(V)
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF)
Ta
=25
°C
f
=1MHz
IE
=0A
0.1
1
10
100
1
20
10
5
2
50
100
200
500
1000
Cib
Cob
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1197KT146Q/R | 制造商:ROHM Semiconductor 功能描述:Transistor, PNP, Driver, -32V, -800mA, |
| 2SB1197KT146R | 功能描述:两极晶体管 - BJT PNP 32V 0.8A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1197KXLT1 | 制造商:WILLAS 制造商全称:WILLAS 功能描述:Low Frequency Transistor |
| 2SB1197-P | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Silicon Epitaxial Transistors |
| 2SB1197-P_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Silicon Epitaxial Transistors |
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