参数资料
型号: 2SB1221P
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 70 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: ROHS COMPLIANT, TO-92NL-A1, 3 PIN
文件页数: 1/2页
文件大小: 249K
代理商: 2SB1221P
Transistors
1
Publication date: March 2003
SJC00074BED
2SB1221
Silicon PNP epitaxial planar type
For general amplification
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Allowing supply with the radial taping
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
250
V
Collector-emitter voltage (Base open)
VCEO
200
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
70
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC
= 100 A, I
B
= 0
200
V
Emitter-base voltage (Collector open)
VEBO
IE = 1 A, IC = 0
5V
Forward current transfer ratio *
hFE
VCE = 10 V, IC = 5 mA
30
220
Collector-emitter saturation voltage
VCE(sat)
IC
= 50 mA, I
B
= 5 mA
1.5
V
Transition frequency
fT
VCB = 10 V, IE = 10 mA, f = 200 MHz
50
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
5
10
pF
(Common base, input open circuited)
Rank
P
Q
R
hFE
30 to
100
60 to 150
100 to 220
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92NL-A1 Package
2.3
±
0.2
5.0±0.2
0.7±0.1
4.0±0.2
8.0
±
0.2
0.7
±
0.2
13.5
±
0.5
2.54±0.15
(1.27)
0.45
+0.2
–0.1
0.45
+0.15
–0.1
13
2
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数
参数描述
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