- 您现在的位置：买卖IC网 > PDF目录49978 > 2SB1232P 40 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218 PDF资料下载
参数资料
| 型号： | 2SB1232P |
| 元件分类： | 功率晶体管 |
| 英文描述： | 40 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218 |
| 封装： | TO-3PB, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 125K |
| 代理商： | 2SB1232P |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SB1232 : PNP Epitaxial Planar Silicon Transistor
2SD1842 : NPN Triple Diffused Planar Silicon Transistor
100V/40A Switching Applications
Ordering number:EN3261A
2SB1232/2SD1842
92098HA (KT)/71095TS/7190MH, TA (KOTO) No.3261–1/4
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
0
1
)
–
(V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
1
)
–
(V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
6
)
–
(V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
0
4
)
–
(A
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
5
6
)
–
(A
t
n
e
r
u
C
e
s
a
BIB
2
1
)
–
(A
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
0
.
3W
0
5
1W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
( ) : 2SB1232
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2022A
[2SB1232/2SD1842]
Applications
Motor drivers, relay drivers, converters, and other
general high-current switching applications.
Features
Large current capacity and wide ASO.
Low saturation voltage.
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Tc=25C
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
1
)
–
(
=
E 0
=1
.
0
)
–
(A
m
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
5
)
–
(
=
C 0
=1
.
0
)
–
(A
m
n
i
a
G
t
n
e
r
u
C
D
h E
F 1V E
C
I
,
V
2
)
–
(
=
C
A
4
)
–
(
=*
0
5*
0
4
1
h E
F 2V E
C
I
,
V
2
)
–
(
=
C
A
6
1
)
–
(
=0
2
e
g
a
t
l
o
V
n
o
i
t
a
r
u
t
a
S
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
)
t
a
s
(
E
C
IC
I
,
A
6
1
)
–
(
=
B
A
6
.
1
)
–
(
=8
.
0
)
–
(V
e
g
a
t
l
o
V
n
o
i
t
a
r
u
t
a
S
r
e
t
i
m
E
-
o
t
-
e
s
a
BV
)
t
a
s
(
E
B
IC
I
,
A
6
1
)
–
(
=
B
A
6
.
1
)
–
(
=5
.
1
)
–
(V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1842Q | 40 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 2SD1842Q | 40 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 2SD1843 | 1000 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1852-AC | 200 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1852-AD | 200 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1234-TB-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS DARL PNP 80V 50A SOT23 |
| 2SB1236ATV2P | 功能描述:两极晶体管 - BJT DVR PNP 160V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1236ATV2Q | 功能描述:两极晶体管 - BJT DVR PNP 160V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1236TV2Q | 功能描述:两极晶体管 - BJT DVR PNP 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1236TV2R | 功能描述:两极晶体管 - BJT DVR PNP 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。