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参数资料
| 型号： | 2SB1243TV2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ATV, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 141K |
| 代理商： | 2SB1243TV2 |
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相关PDF资料 |
PDF描述 |
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| 2SB1243TV2Q | 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1243TV2R | 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1250P | 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB1251 | 4 A, 90 V, PNP, Si, POWER TRANSISTOR, TO-220F |
| 2SB1260G-Q-TN3-R | 1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1243TV2P | 功能描述:两极晶体管 - BJT DRIVER PNP 50V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1243TV2Q | 功能描述:两极晶体管 - BJT PNP 50V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1243TV2R | 功能描述:两极晶体管 - BJT PNP 50V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB12520Q | 功能描述:TRANS PNP 100VCEO 5A TO-220F RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB1257 | 制造商:Sanken Electric Co Ltd 功能描述:PNP Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS PNP DARL 60V 4A TO220F 制造商:Distributed By MCM 功能描述:SUB ONLY SANKEN TRANSISTOR FM20-60V -4A 25W BCE |
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