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参数资料
| 型号： | 2SB1259 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 45K |
| 代理商： | 2SB1259 |
18
2-1-4
List of General Purpose Transistors by Part No.
Part No.
2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
2SA1488A
2SA1492
2SA1493
2SA1494
2SA1567
2SA1568
2SA1667
2SA1668
2SA1673
2SA1693
2SA1694
2SA1695
2SA1725
2SA1726
2SA1859
2SA1859A
2SA1860
2SA1907
2SA1908
2SA1909
2SA2003
2SB1257
2SB1258
2SB1259
2SB1351
2SB1352
2SB1382
2SB1383
2SB1420
2SB1559
2SB1560
2SB1570
2SB1587
2SB1588
2SB1647
2SB1648
2SB1649
2SB1659
2SB1685
2SB1686
2SB1687
2SC2023
2SC2837
2SC2921
2SC2922
2SC3179
2SC3263
2SC3264
VCBO(V)
–150
–160
–180
–60
–230
–150
–160
–180
–60
–80
–180
–200
–50
–60
–150
–200
–180
–80
–120
–140
–80
–150
–180
–150
–80
–120
–140
–60
–100
–120
–60
–120
–160
–150
–110
300
150
160
180
80
230
VCEO(V)
–150
–160
–180
–60
–230
–150
–160
–180
–60
–80
–180
–200
–50
–60
–150
–200
–180
–80
–120
–140
–80
–150
–180
–150
–80
–120
–140
–60
–100
–120
–60
–120
–160
–150
–110
300
150
160
180
60
230
Remarks
LAPT
Low VCE (sat)
LAPT
Darlington
LAPT
Ic(A)
–10
–15
–17
–4
–15
–17
–14
–15
–4
–15
–17
–12
±12
–2
–15
–6
–8
–10
–6
–2
–14
–6
–8
–10
–5
–4
–6
–10
–12
–16
–25
–16
–8
–10
–12
–8
–10
–15
–17
–15
–6
2
10
15
17
4
15
17
PC(W)
100
150
200
30
130
200
125
130
25
130
150
200
35
25
85
60
80
100
30
50
20
80
60
75
80
25
30
60
75
120
80
100
150
75
80
130
200
85
50
60
30
60
40
100
150
200
30
130
200
Package
TO-3P
MT-200 (2-screw mount)
TO-220
TO-3P
MT-200 (2-screw mount)
TO-3P
TO-220F
TO-3P
MT-200 (2-screw mount)
TO-220F
TO-3PF
TO-3P
TO-220F
TO-220
TO-220F
TO-3PF
TO-220F
TO-3PF
TO-3P
MT-200 (2-screw mount)
TO-3PF
TO-3P
MT-200 (2-screw mount)
TO-3PF
TO-220
TO-3P
TO-220F
TO-3PF
TO-220
TO-3P
MT-200 (2-screw mount)
TO-220
TO-3P
MT-200 (2-screw mount)
Fig. No.
1
2
3
1
2
1
4
1
2
4
5
1
4
3
4
5
4
5
1
2
5
1
2
5
3
1
4
5
3
1
2
3
1
2
2-1
Power Transistors
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1260FRAT100R | 制造商:ROHM Semiconductor 功能描述: |
| 2SB1260T100 | 制造商:Rohm 功能描述:PNP Cut Tape |
| 2SB1260T100P | 功能描述:两极晶体管 - BJT DVR PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1260T100Q | 功能描述:两极晶体管 - BJT PNP 80V 1A SO-89 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1260T100R | 功能描述:两极晶体管 - BJT PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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