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参数资料
| 型号： | 2SB1261-Z |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, MP-3, SC-63, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 1419K |
| 代理商： | 2SB1261-Z |
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SILICON POWER TRANSISTOR
2SB1261-Z
PNP SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. D18262EJ4V0DS00 (4th edition)
Date Published December 2007 NS
Printed in Japan
1986, 2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SB1261-Z is designed for Audio Frequency Amplifier and
Switching, especially in Hybrid Integrated Circuits.
FEATURES
High hFE
hFE = 100 to 400
Low VCE(sat) VCE(sat)
≤ 0.3 V
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
7.0
V
Collector Current (DC)
IC(DC)
3.0
A
Collector Current (pulse)
Note 1
IC(pulse)
5.0
A
Base Current (DC)
IB(DC)
0.5
A
Total Power Dissipation (TA = 25
°C) Note 2
PT1
2.0
W
Total Power Dissipation (TC = 25
°C)
PT2
10
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 7.5 cm
2 × 0.7 mm
PACKAGE DRAWING (Unit: mm)
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
TO-252 (MP-3Z)
1. Base
2. Collector
3. Emitter
4. Collector Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1261-Z-AZ | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas 功能描述:Trans GP BJT PNP 60V 3A 3-Pin(2+Tab) TO-252 |
| 2SB1261-Z-AZ(K) | 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SB1268R-E | 制造商:ON Semiconductor 功能描述: |
| 2SB1269R-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 50V 7A TO-220MF |
| 2SB1274 | 制造商:n/a 功能描述:2SB1274 N9H1D |
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